Department of Semiconductor and Electronic Engineering · Daegu University

We make matter emit light, one atomic layer at a time.

Our group builds light-emitting and light-sensing devices from semiconductors only a few atoms thick — suspending monolayers over nanostructured templates, stacking them into tunnel diodes, and reading out what happens with confocal and near-field spectroscopy that we design ourselves.

Fig. 1 — Emission spectrum of the lab Hover a peak

Citation total from the Google Scholar profile, checked August 2026. Scholar publishes no API, so this figure is refreshed by hand. The paper count is taken from the list below.

01

Research

Five directions, ordered the way a spectrometer would order them — by the wavelength of the light each one lives at.

660 nm

Freestanding two-dimensional semiconductors

A monolayer touching a substrate is never really free: the substrate strains it, dopes it, and quenches its emission. We lift transition metal dichalcogenides off the surface entirely, suspending them across nanostructured templates in a single lay-on step. The resulting membranes show photoresponsivity orders of magnitude above their supported counterparts.

MoS₂WSe₂Suspended membranesPhotodiodes
750 nm

Exciton transport and exciton devices

Excitons carry energy without carrying net charge, which makes them attractive and awkward in equal measure — they are neutral, so they are hard to steer. We study how to gate, confine and switch them, including dark excitons that normally refuse to emit at all until a plasmonic field persuades them otherwise.

Exciton transistorDark excitonsPlasmon couplingTRPL
520 nm

Van der Waals heterostructure devices

Stacking a monolayer semiconductor on hexagonal boron nitride on gallium nitride gives a tunnel diode with no lattice-matching requirement and no epitaxy. We build metal–insulator–semiconductor and semiconductor–insulator–semiconductor devices this way, and ask what the interfaces — not the layers — are actually doing.

MoS₂ / h-BN / GaNMIS & SIS diodesTellurium FETsInterface doping
450 nm

III-nitride light emitters

Why does an InGaN LED lose efficiency exactly when you drive it hard? We map carrier localisation inside the quantum wells directly, then redistribute it — with V-pits, ZnO nanorod arrays, periodic hole patterns and graphene-oxide passivation — to pull more light out of the same active region.

InGaN / GaNEfficiency droopLight extractionMOCVD
365 nm

Optical instrumentation we build ourselves

Some measurements do not exist until you build the instrument that makes them. The lab develops confocal electroluminescence microscopes, UV confocal systems and time-resolved near-field probes — which is also why our device work and our spectroscopy work are never really separate projects.

Confocal ELNSOMUV microscopyRaman / SERS

Funded projects

2025 – present
Development of an exciton transistor based on 2D semiconductors National Research Foundation of Korea · Excellent Young Researcher Program · PI
₩100,000,000
2025
Multi-radiation shielding film based on two-dimensional semiconductors NRF · Next-Generation Semiconductor Convergence and Open Sharing System · PI
₩30,000,000
2022 – 2025
High-efficiency photodiodes from integrated freestanding 2D TMDs NRF · Creative Challenge Research-Based Support Program · PI
₩210,000,000
02

People

The group is new and growing. There is room for you in it.

Drop a photo at
images/portrait
jpg · png · webp

Hyun Jeong, Ph.D.

Principal Investigator · Assistant Professor

Hyun Jeong leads the 2D Optoelectronics Laboratory and directs the Semiconductor Bootcamp Center at Daegu University. He has spent his career at the point where device fabrication meets optical measurement: first on GaN light emitters at Jeonbuk National University, then on two-dimensional materials at IBS-CINAP, at the Université de Technologie de Troyes in France, and at Hanyang University, with four years in between developing OLED lighting at LG Display.

His work on integrated freestanding transition metal dichalcogenides appeared on the front cover of Advanced Materials and became the basis for the group's current programme on suspended-membrane photodetectors and exciton devices.

Research interests Semiconductors · Optoelectronics · Two-dimensional materials · Spectroscopy · Light-emitting diodes

Appointments

  • Daegu UniversityAssistant Professor · 2025–
  • Semiconductor Bootcamp CenterDirector · 2025–
  • Hanyang UniversityResearch Professor · 2022–2025
  • LG DisplayPrincipal Research Engineer · 2018–2022
  • KIMM · UTT (France) · IBS-CINAP · GISTPostdoctoral research · 2012–2018

Education

  • Ph.D., Semiconductor EngineeringJeonbuk National University · 2012
  • M.S., Semiconductor EngineeringJeonbuk National University · 2008
  • B.S., Semiconductor PhysicsJeonbuk National University · 2006

Group members

NamePH.D. CANDIDATE
Research topic · photo: images/member-1
NameM.S. STUDENT
Research topic · photo: images/member-2
NameM.S. STUDENT
Research topic · photo: images/member-3
NameUNDERGRADUATE INTERN
Research topic · photo: images/member-4

Openings

We are recruiting graduate students and undergraduate interns interested in two-dimensional semiconductors, optical spectroscopy, or device fabrication. Cleanroom experience is welcome but not expected — most of what we do is learned at the bench. Email the PI with a short note about what you want to work on.

Write to us
03

Publications

62 peer-reviewed papers, 23 as first author. Five that best describe what the lab does — the complete list follows below.

All publications

62 peer-reviewed papers, newest first. The five marked Featured are the ones shown above.

  • 2025
  • [62] High-performance p-type tellurium field-effect transistors by lignin inductionH. Jeong, I.-C. Choi, C. Kwon, S. Bang, J. Kim, C. Lee, H. M. Jeong, M. S. JeongACS Applied Materials & Interfaces 17, 68114
  • [61] Large-area bright emission of plasmon-coupled dark excitons at room temperatureFeaturedH. Jeong, H. C. Suh, G. H. Cho, H. Joo, Y. Koo, H. Ko, K. K. Kim, Y. Kim, J. Kim, K.-D. Park, M. S. JeongAdvanced Science 12(3), 2411841
  • 2024
  • [60] Ultrahigh photosensitivity based on single-step lay-on integration of freestanding two-dimensional transition-metal dichalcogenideFeaturedH. Jeong, K. Nomenyo, H. M. Oh, A. Gwiazda, S. J. Yun, C. Chevalier César, S. W.-N. Bayor, M. S. Jeong, Y. H. Lee, G. LérondelACS Nano 18(5), 4432–4442
  • [59] Strain-sensitive optical properties of monolayer tungsten diselenideH. Jeong, G. H. Cho, J. Yoo, S. M. Lee, R. Salas-Montiel, H. Ko, K. K. Kim, M. S. JeongApplied Surface Science 653, 159382
  • [58] Platform for surface-enhanced Raman scattering in layered quantum materialsH. Jeong, H. C. Suh, G. H. Cho, R. Salas-Montiel, H. Ko, K. K. Kim, M. S. JeongApplied Surface Science 646, 158823
  • 2023
  • [57] Two-dimensional confocal photoluminescence spectroscopy of nonpolar a-plane InGaN/GaN multiple quantum wellsH. Jeong, H. Kim, M. S. JeongCeramics International 49, 8607–8613
  • 2022
  • [56] Redistribution of carrier localization in InGaN-based light-emitting diodes for alleviating efficiency droopH. Jeong, G. H. Cho, M. S. JeongJournal of Luminescence 252, 119277
  • [55] Spectroscopic analysis and two-dimensional confocal photoluminescence properties of GaN films grown on silicon and sapphire substratesH. JeongJournal of the Korean Physical Society 81, 784–789
  • 2020
  • [54] Graphene/PbS quantum dot hybrid structure for application in near-infrared photodetectorsH. Jeong, J. H. Song, S. Jeong, W. S. ChangScientific Reports 10, 12475
  • 2017
  • [53] Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patternsH. Jeong, R. Salas-Montiel, G. Lerondel, M. S. JeongScientific Reports 7, 45726
  • [52] Ultraviolet, blue, and green InGaN-based light-emitting diodes functionalized with ZnO nanorodsH. Jeong, R. Salas-Montiel, G. Lerondel, M. S. JeongJournal of Alloys and Compounds 708, 612–618
  • [51] Integrated freestanding two-dimensional transition metal dichalcogenidesFeaturedH. Jeong, H. M. Oh, A. Gokarna, H. Kim, S. J. Yun, G. H. Han, M. S. Jeong, Y. H. Lee, G. LerondelAdvanced Materials 29(18), 1700308 · Front cover
  • 2016
  • [50] Modulating electronic properties of monolayer MoS₂ via electron-withdrawing functional group of graphene oxideH. M. Oh*, H. Jeong* (co-first author), G. H. Han, H. Kim, J. H. Kim, S. Y. Lee, S. Y. Jeong, S. Jeong, D. J. Park, K. K. Kim, Y. H. Lee, M. S. JeongACS Nano 10(11), 10446–10453
  • [49] Metal–insulator–semiconductor diode consisting of two-dimensional nanomaterialsFeaturedH. Jeong, H. M. Oh, S. Bang, H. J. Jeong, S.-J. An, G. H. Han, H. Kim, S. J. Yun, K. K. Kim, J. C. Park, Y. H. Lee, G. Lerondel, M. S. JeongNano Letters 16(3), 1858–1862
  • 2015
  • [48] Heterogeneous nucleation and high orientation of ZnO nanorods on grapheneH. S. Lee, M. T. Man, K.-D. Park, H. M. Oh, J. Kim, H. Jeong, Y. H. Kim, M. S. JeongJournal of the Korean Physical Society 67(10), 1819–1823
  • [47] Confocal electroluminescence investigations of highly efficient green InGaN LED via ZnO nanorodsH. Jeong, M. S. JeongJournal of Alloys and Compounds 660(5), 480–485
  • [46] Spatially resolved optical properties of ZnO sub-microstructures on a graphene monolayerH. M. Oh, J. Kim, H. Jeong, Y. H. Kim, M. S. Jeong, H. S. Lee, J. S. KimJournal of the Korean Physical Society 67(9), 1634–1638
  • [45] Modulating the shape of ZnO nanostructures grown by using thermal chemical-vapor depositionJ. Kim, Y. H. Kim, H. M. Oh, H. Jeong, S. C. Lim, M. S. Jeong, H. S. LeeJournal of the Korean Physical Society 67(9), 1588–1591
  • [44] Semiconductor–insulator–semiconductor diode consisting of monolayer MoS₂, h-BN, and GaN heterostructureFeaturedH. Jeong, S. Bang, H. M. Oh, H. J. Jeong, S.-J. An, G. H. Han, H. Kim, K. K. Kim, J. C. Park, Y. H. Lee, G. Lerondel, M. S. JeongACS Nano 9(10), 10032–10038
  • [43] Optimal length of ZnO nanorods for improving the light-extraction efficiency of blue InGaN light-emitting diodesH. Jeong, R. Salas-Montiel, M. S. JeongOptics Express 23(18), 23195–23207
  • [42] Mechanisms of enhanced light emission in GaN-based light-emitting diodes by V-shaped micropitsH. Jeong, J.-H. Kim, C.-H. Hong, E.-K. Suh, M. S. JeongOptical Materials Express 5(6), 1306–1315
  • [41] Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodesH. Jeong, H. J. Jeong, H. M. Oh, C.-H. Hong, E.-K. Suh, G. Lerondel, M. S. JeongScientific Reports 5, 9373
  • [40] Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LEDH. Jeong, S. Y. Jeong, D. J. Park, H. J. Jeong, S. Jeong, J. T. Han, H. J. Jeong, S. Yang, H. Y. Kim, K.-J. Baeg, S. J. Park, Y. H. Ahn, E.-K. Suh, G.-W. Lee, Y. H. Lee, M. S. JeongScientific Reports 5, 7778
  • [39] Direct growth of etch pit-free GaN crystals on few-layer grapheneS. J. Chae, Y. H. Kim, T. H. Seo, D. L. Duong, S. M. Lee, M.-H. Park, E. S. Kim, J. J. Bae, S. Y. Lee, H. Jeong, E.-K. Suh, C. W. Yang, M. S. Jeong, Y. H. LeeRSC Advances 5(2), 1343–1349
  • 2014
  • [38] Enhancement of optical output power of light-emitting diodes with photonic crystals in InGaN/GaN multiple quantum wells by sulfide passivationY.-C. Leem, H.-M. Lee, Y.-S. Park, S.-Y. Yim, H. Jeong, G.-Y. Jung, S.-J. ParkECS Journal of Solid State Science and Technology 3(8), Q153–Q156
  • [37] One-step transfer and integration of multifunctionality in CVD graphene by TiO₂/graphene oxide hybrid layerH. J. Jeong, H. Y. Kim, H. Jeong, J. T. Han, S. Y. Jeong, K.-J. Baeg, M. S. Jeong, G.-W. LeeSmall 10(10), 2057
  • [36] Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arraysH. Jeong, D. J. Park, H. S. Lee, Y. H. Ko, J. S. Yu, S.-B. Choi, D.-S. Lee, E.-K. Suh, M. S. JeongNanoscale 6(8), 4371–4378
  • 2013
  • [35] Quantum dot–carbon nanotube hybrid phototransistor with an enhanced optical Stark effectC. Biswas, H. Jeong, M. S. Jeong, W. J. Yu, D. Pribat, Y. H. LeeAdvanced Functional Materials 23(29), 3653–3660
  • [34] Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diodeH. K. Kim, Y. J. Park, J. H. Kang, N. Han, M. Han, B. D. Ryu, K. B. Ko, J. H. Yang, Y. T. Kim, S. Chandramohan, H. Jeong, M. S. Jeong, C.-H. HongOptics Letters 38(9), 1491–1493
  • [33] An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholesS. H. Kim, H. H. Park, Y. H. Song, H. J. Park, J. B. Kim, S. R. Jeon, H. Jeong, M. S. Jeong, G. M. YangOptics Express 21(6), 7125–7130
  • [32] Time-resolved ultraviolet near-field scanning optical microscope for characterizing photoluminescence lifetime of light-emitting devicesK.-D. Park, H. Jeong, Y. H. Kim, S.-Y. Yim, H. S. Lee, E.-K. Suh, M. S. JeongJournal of Nanoscience and Nanotechnology 13(3), 1798–1801
  • 2012
  • [31] Enhancement of light output power in GaN-based light-emitting diodes using hydrothermally grown ZnO micro-wallsH. Jeong, Y. H. Kim, T. H. Seo, H. S. Lee, J. S. Kim, E.-K. Suh, M. S. JeongOptics Express 20(10), 10597–10604
  • 2011
  • [30] Submicro-electroluminescence spectroscopy of dodecagonal micropit-arranged blue light-emitting diodesH. Jeong, T. S. Oh, Y. S. Lee, H. G. Kim, C.-H. Hong, E.-K. Suh, O. H. Cha, H. S. Lee, M. S. JeongJournal of Physics D: Applied Physics 44(50), 505102
  • [29] Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layersY. J. Park, J. H. Kang, H. Y. Kim, V. V. Lysak, S. Chandramohan, J. H. Ryu, H. K. Kim, N. Han, H. Jeong, M. S. Jeong, C.-H. HongOptics Express 19(23), 23429–23435
  • [28] Development of a backscattering type ultraviolet apertureless near-field scanning optical microscopeS. Kwon, H. Jeong, M. S. Jeong, S. JeongJournal of Nanoscience and Nanotechnology 11(8), 7226–7229
  • [27] A crossbar-type high sensitivity ultraviolet photodetector array based on a one hole–one nanorod configuration via nanoimprint lithographyHuisu Jeong, K. S. Kim, Y. H. Kim, H. Jeong, H. Song, K. H. Lee, M. S. Jeong, D. Wang, G. Y. JungNanotechnology 22(27), 275310
  • [26] Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diodeT. H. Seo, K. J. Lee, T. S. Oh, Y. S. Lee, H. Jeong, A. H. Park, H. Kim, Y. R. Choi, E.-K. Suh, T. V. Cuong, V. H. Pham, J. S. Chung, E. J. KimApplied Physics Letters 98(25), 251114
  • [25] Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrateT. S. Oh, H. Jeong, Y. S. Lee, A. H. Park, T. H. Seo, H. Kim, K. J. Lee, M. S. Jeong, E.-K. SuhOptics Express 19(10), 9385–9391
  • [24] Self-assembled periodic silica nanosphere arrays on wet-etched patterned sapphire substrate for a high-light-extraction-efficiency light-emitting diodeN. Han, H.-G. Kim, H.-Y. Kim, J.-H. Kang, B.-D. Ryu, Y.-J. Park, M. Han, H. Jeong, S. Chandramohan, E.-K. Suh, C.-H. HongIEEE Electron Device Letters 32(4), 527–529
  • [23] Development of a reflection-type ultraviolet laser scanning confocal microscope combined with an atomic force microscopeS. Kwon, S. Jeong, H. Jeong, Y.-H. Kim, M. S. JeongJournal of the Korean Physical Society 58(2), 353–357
  • [22] Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrateT. S. Oh, H. Jeong, Y. S. Lee, T. H. Seo, A. H. Park, H. Kim, K. J. Lee, M. S. Jeong, E.-K. SuhThin Solid Films 519(8), 2398–2401
  • [21] Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor depositionT. S. Oh, A. H. Park, H. Jeong, H. Kim, T. H. Seo, Y. S. Lee, M. S. Jeong, K. J. Lee, E.-K. SuhJournal of Alloys and Compounds 509(6), 2952–2956
  • [20] Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodesY. J. Park, H. Y. Kim, J. H. Ryu, H. K. Kim, J. H. Kang, N. Han, M. Han, H. Jeong, M. S. Jeong, C.-H. HongOptics Express 19(3), 2029–2036
  • [19] Growth of GaN epilayers on defect-selective etched nanoporous GaN templates generated by electrochemical etchingA. H. Park, K. J. Lee, T. S. Oh, Y. S. Lee, H. Jeong, T. H. Seo, H. Kim, E.-K. SuhJournal of The Electrochemical Society 158(2), D119–D122
  • 2010
  • [18] Improved strain-free GaN growth with a nearly lattice-matched AlInN interlayer by metalorganic chemical vapor depositionT. S. Oh, H. Jeong, T. H. Seo, Y. S. Lee, A. H. Park, H. Kim, K. J. Lee, E.-K. SuhJapanese Journal of Applied Physics 49(11), 111001
  • [17] Polymer-templated hydrothermal growth of vertically aligned single-crystal ZnO nanorods and morphological transformations using structural polarityK. S. Kim, H. Jeong, M. S. Jeong, G. Y. JungAdvanced Functional Materials 20(18), 3055–3063
  • [16] Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodesH. G. Kim, H. K. Kim, H. Y. Kim, H. Jeong, S. Chandramohan, P. Uthirakumar, M. S. Jeong, J.-S. Lee, E.-K. Suh, C.-H. HongOptics Letters 35(18), 3012
  • [15] Enhanced light extraction in GaN-based light-emitting diodes with holographically fabricated concave hemisphere-shaped patterning on indium-tin-oxide layerT. H. Seo, T. S. Oh, Y. S. Lee, H. Jeong, J. D. Kim, H. Kim, A. H. Park, K. J. Lee, C.-H. Hong, E.-K. SuhJapanese Journal of Applied Physics 49(9), 092101
  • [14] Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodesK. S. Kim, S.-M. Kim, H. Jeong, M. S. Jeong, G. Y. JungAdvanced Functional Materials 20(7), 1076
  • 2009
  • [13] Coupling of InGaN/GaN multiquantum-well photoluminescence to surface plasmons in platinum nanoclusterT. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, E.-K. SuhApplied Physics Letters 95(11), 111112
  • [12] Quantum efficiency in multi-quantum well InGaN/GaN light-emitting diodes with electroluminescence characteristicsO. Cha, C.-H. Kim, J. Lee, J. Jeong, J. Kim, H. Jeong, E.-K. SuhJournal of the Korean Physical Society 55(1), 271
  • [11] Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structureS.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, M. S. JeongJournal of Physics D: Applied Physics 42(15), 152004
  • [10] Epitaxial growth of improved GaN epilayer on sapphire substrate with platinum nanoclusterT. S. Oh, Y. S. Lee, H. Jeong, J. D. Kim, T. H. Seo, K. J. Lee, E.-K. SuhJournal of Crystal Growth 311(9), 2655
  • [9] Relative content evaluation of single-walled carbon nanotubes using UV-VIS-NIR absorption spectroscopyO.-H. Cha, M.-S. Jeong, C. C. Byeon, H. Jeong, J.-H. Han, Y.-C. Choi, K.-H. An, K.-H. Oh, K.-K. Kim, Y.-H. LeeCarbon Letters 10(1), 9
  • [8] Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrateT. S. Oh, Y. S. Lee, H. Jeong, J. D. Kim, T. H. Seo, E.-K. SuhPhysica Status Solidi (c) 6(2), 589
  • 2008
  • [7] Large-bandgap bowing of InxAl1−xN ternary films grown by using metalorganic chemical vapor depositionT. S. Oh, Y. S. Lee, H. Jeong, J. D. Kim, T. H. Seo, E.-K. SuhJournal of the Korean Physical Society 53(4), 1956
  • [6] GaN-based light-emitting diodes on micro-lens patterned sapphire substrateT. S. Oh, S. H. Kim, T. K. Kim, Y. S. Lee, H. Jeong, G. M. Yang, E.-K. SuhJapanese Journal of Applied Physics 47(7), 5333
  • [5] Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wellsS.-R. Jeon, S.-J. Lee, S. H. Jung, S. H. Lee, J. H. Baek, H. Jeong, O. H. Cha, E.-K. Suh, M. S. JeongJournal of Physics D: Applied Physics 41(13), 132006
  • [4] Growth of periodic micropits InGaN-based LED structure on wet-etch patterned sapphire substrateH. Y. Kim, T. V. Cuong, H. G. Kim, O. H. Cha, J. Y. Park, Y. S. Lee, H. Jeong, C.-H. Hong, E.-K. Suh, M. S. Jeong, H. S. CheongPhysica Status Solidi (c) 5(6), 2001
  • [3] Growth and properties of Al-rich InxAl1−xN ternary alloy grown on GaN template by metalorganic chemical vapour depositionT. S. Oh, J. O. Kim, H. Jeong, Y. S. Lee, S. Nagarajan, K. Y. Lim, C.-H. Hong, E.-K. SuhJournal of Physics D: Applied Physics 41(9), 095402
  • [2] Purity measurement of single-walled carbon nanotubes by UV-VIS-NIR absorption spectroscopy and thermogravimetric analysisM. S. Jeong, C. C. Byeon, O. H. Cha, H. Jeong, J. H. Han, Y. C. Choi, K. H. An, K. H. Oh, K. K. Kim, Y. H. LeeNano 3(2), 101
  • [1] Spatial distribution of crown shaped light emission from a periodic inverted polygonal deflector embedded in an InGaN/GaN light emitting diodeH. G. Kim, T. V. Cuong, H. Jeong, S. H. Woo, O. H. Cha, E.-K. Suh, C.-H. Hong, H. K. Cho, B. H. Kong, M. S. JeongApplied Physics Letters 92(6), 061118

Full publication list on Google Scholar ↗

04

News

  • Invited talk at ISPSA 2026, Jeju

    Hyun Jeong presents "Architectural and Interfacial Engineering of Two-Dimensional Semiconductors for Next-Generation Electronics and Optoelectronics."

  • Invited talk at the Taiwan Vacuum Society annual symposium

    "Engineering Two-Dimensional Materials for High-Performance Optoelectronic Applications," Taoyuan, Taiwan.

  • Tellurium transistor paper accepted in ACS Applied Materials & Interfaces

    A lignin-induced route to high-performance p-type tellurium field-effect transistors.

  • NRF Excellent Young Researcher Program awarded

    A four-year programme to build an exciton transistor from two-dimensional semiconductors. Department announcement ↗

  • The lab opens at Daegu University

    Hyun Jeong joins the Department of Semiconductor and Electronic Engineering and takes on direction of the Semiconductor Bootcamp Center.

  • Dark exciton emission published in Advanced Science

    Plasmon coupling makes normally non-radiative dark excitons emit brightly over large areas at room temperature.

06

Contact

Address

Department of Semiconductor
and Electronic Engineering
Daegu University
201 Daegudae-ro, Gyeongsan-si
Gyeongsangbuk-do 38453
Republic of Korea

Get in touch

hjeong6620@daegu.ac.kr +82 53 850 6621

Room number — add here

Elsewhere

Google Scholar ↗ Semiconductor Bootcamp Center ↗ Daegu University ↗